Channel strain control for nonplanar compound semiconductor devices

Channel strain control for nonplanar compound semiconductor devices

  • CN 105,321,822 A
  • Filed: 12/15/2014
  • Published: 02/10/2016
  • Est. Priority Date: 06/27/2014
  • Status: Active Grant
First Claim
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1. a semiconductor device, comprising:

  • Substrate;

    AndFin structure, formed over the substrate, wherein, described fin structure comprises;

    Relative regions and source/drain, on the surface being arranged on described substrate;

    Channel region, to be arranged between described relative regions and source/drain and on the surface being arranged on described substrate;

    WithBuried layer, is arranged between described channel region and described substrate, and wherein, described buried layer comprises compound semiconductor oxide.

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