Replacement metal gate transistor

Replacement metal gate transistor

  • CN 105,324,847 B
  • Filed: 06/13/2014
  • Issued: 05/26/2020
  • Est. Priority Date: 06/19/2013
  • Status: Active Grant
First Claim
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1. A replacement metal gate transistor, comprising:

  • a trench having a bottom, a first sidewall, and a second sidewall;

    a layer disposed within the trench, the layer having a bottom region disposed on the bottom of the trench and sidewall regions disposed on the first and second sidewalls; and

    the contact layer is arranged in the groove;

    wherein the layer is a first layer, the replacement metal gate transistor further comprises a second layer disposed in the trench, the second layer having a bottom region disposed on the bottom region of the first layer and a sidewall region disposed on the sidewall region of the first layer, the replacement metal gate transistor further comprising a third layer disposed in the trench, the third layer disposed on the bottom region of the second layer and covering the bottom region and the sidewall region of the second layer, wherein a plane is defined by an upper surface of the first layer, an upper surface of the second layer, and an upper surface of the third layer, and a forward projection of the plane on the bottom of the trench completely overlaps the bottom, the contact layer is on the first layer, the second layer, and the third layer, and extends to an upper surface of the first sidewall relatively remote from the base and to an upper surface of the second sidewall relatively remote from the base.

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