Semiconductor device and manufacturing method therefor

Semiconductor device and manufacturing method therefor

  • CN 105,336,782 A
  • Filed: 08/11/2014
  • Published: 02/17/2016
  • Est. Priority Date: 08/11/2014
  • Status: Active Application
First Claim
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1. a semiconductor device, comprising:

  • Semiconductor substrate;

    Be positioned at the gate stack of semiconductor substrate, described gate stack comprises grid conductor and is clipped in the gate-dielectric between grid conductor and Semiconductor substrate;

    Be positioned at the grid curb wall on the side of gate stack;

    Be arranged in source region and the drain region of Semiconductor substrate;

    AndThe first conductive channel be electrically connected with source region, drain region and grid conductor respectively, the second conductive channel and the 3rd conductive channel,Wherein, each conductive channel in described first conductive channel and the second conductive channel comprises the Part I adjacent with grid curb wall and is positioned at the Part II above grid curb wall, the top of described Part I flushes with gate electrode side coping, and contacts with the bottom of described Part II.

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