A chemical mechanical polishing method and a chemical mechanical polishing apparatus

A chemical mechanical polishing method and a chemical mechanical polishing apparatus

  • CN 105,364,699 A
  • Filed: 07/25/2014
  • Published: 03/02/2016
  • Est. Priority Date: 07/25/2014
  • Status: Active Application
First Claim
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1. a chemical and mechanical grinding method, is characterized in that, described method comprises:

  • Step S1;

    provide top layer to be ground to be the wafer of Al grid layer;

    Step S2;

    described wafer is placed in chemical-mechanical grinding device, with grinding pad and lapping liquid, the Al grid layer to described wafer carries out cmp;

    Step S3;

    when described Al grid layer is ground to target location, at described wafer rear applied pressure when removing described cmp, by described wafer de-chucking;

    Step S4;

    under the state that described wafer is de-chucking, by described lapping liquid or described lapping liquid and H 2o 2mixed liquor be sprayed on described grinding pad, to clean described grinding pad;

    Step S5;

    after having cleaned, shifts out described wafer from described grinding pad.

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