Formation method of semiconductor structure

Formation method of semiconductor structure

  • CN 105,374,734 A
  • Filed: 08/29/2014
  • Published: 03/02/2016
  • Est. Priority Date: 08/29/2014
  • Status: Active Application
First Claim
Patent Images

1. a formation method for semiconductor structure, is characterized in that, comprising:

  • Substrate is provided;

    Form barrier layer at described substrate surface, in described barrier layer, chemical bond energy is greater than Chemical bond energy in substrate;

    The substrate described surface to barrier layer carries out oxidation processes, and form boundary layer at described substrate surface, described boundary layer is between substrate and barrier layer;

    Etching removes described barrier layer, exposes interface layer surfaces.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×