Method for producing a silicon ingot provided with symmetrical grain boundaries

Method for producing a silicon ingot provided with symmetrical grain boundaries

  • CN 105,378,155 A
  • Filed: 05/26/2014
  • Published: 03/02/2016
  • Est. Priority Date: 05/27/2013
  • Status: Active Application
First Claim
Patent Images

1. , for the manufacture of the method for silicon ingot (5) with symmetrical crystal boundary (6), it at least comprises by the following step formed:

  • I () provides the crucible with longitudinal axis (Z) (1), comprise the paving formed by the directly block-shaped silicon single crystal crystal seed (2) had bottom square or rectangular bottom it;

    Described silicon single crystal crystal seed (2) is placed continuously, is parallel to the orthogonal directions (x) of seed edges and the grid configuration of (y) along the described paving that axis (Z) is seen in having;

    With(II) is by carrying out the directional freeze of silicon in the regrowth on crystal seed of the direction of growth with axis (Z) conllinear;

    It is characterized in that, described paving in step (i) is prepared by identical silicon seed, wherein to be videoed each other by the upset on axis (y) and two adjacent crystal seeds along direction (y) are videoed each other by the upset on axis (x) along two adjacent crystal seeds in direction (x), and misorientation 2 θ

    between the lattice of two adjacent crystal seeds is greater than 4 °

    .

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×