Semiconductor Structures And Methods For Forming Isolation Between Fin Structures Of Finfet Devices

Semiconductor Structures And Methods For Forming Isolation Between Fin Structures Of Finfet Devices

  • CN 105,428,304 A
  • Filed: 09/19/2010
  • Published: 03/23/2016
  • Est. Priority Date: 09/18/2009
  • Status: Active Application
First Claim
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1. be used for being formed in the semiconductor substrate a method for FinFET device, comprise the following steps:

  • Form one or more fin structure from this Semiconductor substrate, this fin structure comprises vertical sidewall, and the Semiconductor substrate that expose of the step forming this one or more fin structure between this one or more fin structure defines isolated groove;

    Deposited oxide layer in the lower surface of this isolated groove and on this vertical sidewall of this one or more fin structure, this oxide layer in this lower surface of this isolated groove has the thickness of this oxide layer be greater than on this vertical sidewall;

    AndRemove this oxide layer from this vertical sidewall and remove this oxide layer at least partially from this isolated groove, to form evenly thick isolating oxide layer in this isolated groove, wherein, the step removing oxide etches this oxide layer and from this oxide layer of this isolated groove etching part from this vertical sidewall with the tropism such as comprising.

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