Vertical power transistor device

Vertical power transistor device

  • CN 105,431,948 A
  • Filed: 08/06/2014
  • Published: 03/23/2016
  • Est. Priority Date: 08/08/2013
  • Status: Active Application
First Claim
Patent Images

1. comprise a transistor device for grid, source electrode and drain electrode, wherein, grid and source electrode are by least JFET district, extension layer are separated with drain electrode with drift layer.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×