A kind of manufacturing method and electronic device of semiconductor devices

A kind of manufacturing method and electronic device of semiconductor devices

  • CN 105,448,683 B
  • Filed: 05/26/2014
  • Issued: 10/25/2019
  • Est. Priority Date: 05/26/2014
  • Status: Active Grant
First Claim
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1. a kind of manufacturing method of semiconductor devices, which is characterized in that the described method includes:

  • Step S101;

    provide include semiconductor substrate and be located at the first kind transistor area of the semiconductor substrate withThe first grid of Second Type transistor area and the front-end devices of second grid, form interlayer dielectric on the semiconductor substrateLayer carries out CMP to the interlayer dielectric layer to expose the first grid and the second grid;

    Step S102;

    removing a part of the second grid so that the second grid is lower than the interlayer dielectric layer;

    Step S103;

    the hard mask layer for covering the first grid, the second grid and the interlayer dielectric layer is formed, is goneExcept the hard mask layer is located at the part of the first kind transistor area, and performed etching using the hard mask layer to removeThe first grid;

    Step S104;

    the first workfunction layers are formed in the original position of the first grid and are located at first work contentGate metal layer on number metal layer;

    Step S105;

    it is high that the gate metal layer, first workfunction layers and the hard mask layer are removed by CMPIn the part of the interlayer dielectric layer, the first metal gates are formed.

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