Method for forming shallow trench isolation

Method for forming shallow trench isolation

  • CN 105,448,801 A
  • Filed: 05/28/2014
  • Published: 03/30/2016
  • Est. Priority Date: 05/28/2014
  • Status: Active Application
First Claim
Patent Images

1. formed shallow trench isolation from a method, it is characterized in that, described method comprises:

  • Step S101;

    provide be formed for accommodating shallow trench isolation from the Semiconductor substrate of groove, in described groove and in described Semiconductor substrate, deposit the first spacer material layer;

    Step S102;

    etch by first time the part described first spacer material layer being positioned at described groove and remove a part;

    Step S103;

    deposit the second spacer material layer on described first spacer material layer, the wherein said second spacer material layer part corresponding with described groove is positioned at described groove;

    Step S104;

    the part removal part by second time etching, described second spacer material layer being positioned at described groove;

    Step S105;

    fluorine residue Transformatin is carried out to described Semiconductor substrate;

    Step S106;

    deposit the 3rd spacer material layer to fill described groove completely on described second spacer material layer.

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