Semiconductor device, manufacturing method thereof and electronic device

Semiconductor device, manufacturing method thereof and electronic device

  • CN 105,448,836 B
  • Filed: 07/09/2014
  • Issued: 06/05/2020
  • Est. Priority Date: 07/09/2014
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device includes:

  • a semiconductor substrate is provided and a semiconductor layer is formed,forming a hard mask layer on the semiconductor substrate;

    etching the hard mask layer and the semiconductor substrate to form a shallow trench;

    filling an isolation material layer in the shallow trench, and enabling the surface of the isolation material layer to be flush with the surface of the hard mask layer through a planarization process;

    removing the hard mask layer to expose the semiconductor substrate, and forming a groove between the isolation material layers;

    forming a tunneling oxide layer on the exposed semiconductor substrate;

    forming a first floating gate material layer on the semiconductor substrate, wherein the first floating gate material layer covers the isolation material layer and the tunneling oxide layer;

    forming a sacrificial layer on the semiconductor substrate, wherein the sacrificial layer fills part of the groove, and the material of the sacrificial layer is DUO;

    removing the first floating gate material layer which is not covered with the sacrificial layer to expose the isolation material layer;

    removing the sacrificial layer to expose the first floating gate material layer;

    forming a second floating gate material layer on the first floating gate material layer by adopting an epitaxial growth process to form a floating gate;

    the method for forming the floating gate does not include a planarization process.

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