High-voltage MiP capacitor and manufacturing method thereof

High-voltage MiP capacitor and manufacturing method thereof

  • CN 105,448,895 A
  • Filed: 07/25/2014
  • Published: 03/30/2016
  • Est. Priority Date: 07/25/2014
  • Status: Active Application
First Claim
Patent Images

1. a high voltage MiP capacitor, is characterized in that, comprising:

  • Polysilicon pole plate, is placed in the bottom of described high voltage MiP capacitor as its first bottom crown;

    First metal polar plate, is placed in the top of described high voltage MiP capacitor as its second bottom crown;

    Second metal polar plate, is arranged between described polysilicon pole plate and described first metal polar plate, as the top crown of described high voltage MiP capacitor;

    AndDielectric layer, is filled between described polysilicon pole plate and described second metal polar plate and between described first metal polar plate and described second metal polar plate.

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