Data writing method, memory control circuit unit and memory storage device

Data writing method, memory control circuit unit and memory storage device

  • CN 105,573,662 B
  • Filed: 10/31/2014
  • Issued: 05/26/2020
  • Est. Priority Date: 10/31/2014
  • Status: Active Grant
First Claim
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1. A data writing method is used for a rewritable nonvolatile memory module and is characterized in that the rewritable nonvolatile memory module comprises a plurality of entity erasing units, and each entity erasing unit comprises a plurality of entity programming units, wherein the data writing method comprises the following steps:

  • compressing data to generate first data;

    judging whether the data length of the first data meets a predefined condition;

    if the data length of the first data meets the predefined condition, writing the first data into a first entity erasing unit in the entity erasing units; and

    if the data length of the first data does not satisfy the predefined condition, generating dummy data according to predefined rules, padding the dummy data to the first data to generate second data and writing the second data into the first physical erase unit, wherein the data length of the second data satisfies the predefined condition,wherein the step of generating the dummy data according to the predefined rule comprises;

    identifying the erasing times of the first entity erasing unit, inputting the erasing times into a random number generating function to generate a random number;

    identifying a plurality of data bits in the first data, selecting at least one data bit from the data bits of the first data; and

    combining the random number and the selected at least one data bit into a basic pattern value, and repeatedly copying the basic pattern value to form the dummy data.

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