Semiconductor device and method for forming the same

Semiconductor device and method for forming the same

  • CN 105,575,778 A
  • Filed: 01/14/2011
  • Published: 05/11/2016
  • Est. Priority Date: 07/30/2010
  • Status: Active Application
First Claim
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1. a semiconductor device, comprising:

  • Semiconductor substrate, have a groove and be positioned at an inverted ladder type recess of this beneath trenches, the sidewall of this inverted ladder type recess has (111) high preferred orientation, and the length ratio of the sidewall of the degree of depth of this groove and this inverted ladder type recess is equal to or greater than 0.5;

    AndOne three five race'"'"'s epitaxial loayers, are formed in this groove and this inverted ladder type recess.

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