Formation method of metal interconnection structure

Formation method of metal interconnection structure

  • CN 105,575,888 A
  • Filed: 10/17/2014
  • Published: 05/11/2016
  • Est. Priority Date: 10/17/2014
  • Status: Active Application
First Claim
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1. a formation method for metal interconnect structure, is characterized in that, comprising:

  • Semiconductor base is provided;

    Groove is formed in described semiconductor base;

    At sidewall and the bottom formation metal seed layer of described groove;

    Barrier bed is formed on described metal seed layer surface;

    Remove the described barrier bed being positioned at described channel bottom, retain the described barrier bed on described trenched side-wall, to expose the metal seed layer of described channel bottom;

    The metal seed layer exposed forms the metal level of filling described groove, to form conductive plunger.

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