Fabrication method for wafer-level vacuum packaging structure of piezoelectric vibration energy collector

Fabrication method for wafer-level vacuum packaging structure of piezoelectric vibration energy collector

  • CN 105,621,350 A
  • Filed: 03/29/2016
  • Published: 06/01/2016
  • Est. Priority Date: 03/29/2016
  • Status: Active Application
First Claim
Patent Images

1. the making method of a wafer scale piezoelectric vibration energy collector vacuum encapsulation structure, described wafer scale piezoelectric vibration energy collector vacuum encapsulation structure comprises the first wafer, the 2nd wafer and the 3rd wafer, three is linked into an integrated entity by eutectic bonding mode, forms vacuum chamber;

  • Described 2nd wafer is arranged between the first wafer and the 3rd wafer, and described 2nd wafer comprises anchor, socle girder, quality block, top electrode and lower electrode, it is characterised in that;

    the method comprises the following steps;

    S1. the 2nd wafer manufacturing;

    S11. using SOI Substrate as base material, two-sided growth top layer Si O respectively2Layer and bottom SiO2Layer, SOI Substrate comprises top layer Si layer, middle interlayer SiO2Layer and bottom Si layer;

    S12. at top layer Si O2Layer grows lower electrode layer also graphical;

    S13. on lower electrode layer, piezoelectricity layer is grown also graphical;

    S14. upper electrode layer is grown over the piezoelectric layer also graphical;

    S15. on upper electrode layer, Ge layer is grown also graphical;

    S16.ICP etches functional layer Si to interlayer SiO2Layer;

    The 2nd wafer is formed by step S11�



    S16;

    S2. the first wafer and the 3rd wafer system;

    S21. on silicon layer, grow SiO respectively successively2Layer and Al layer are also graphical, and ICP is etched to and requires that the degree of depth forms shallow chamber;

    S3. the first wafer and the 2nd wafer carry out eutectic bonding;

    S4. the 2nd wafer rear growth Al layer is also graphical, and ICP etches the bottom Si layer of the 2nd wafer, forms quality block figure, and RIE removes bottom SiO2Layer;

    S5. the 3rd wafer and the 2nd wafer carry out eutectic bonding, final formation wafer scale piezoelectric vibration energy collector vacuum encapsulation structure.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×