Method of fabricating bump structure

Method of fabricating bump structure

  • CN 105,632,953 A
  • Filed: 08/24/2010
  • Published: 06/01/2016
  • Est. Priority Date: 05/12/2010
  • Status: Active Application
First Claim
Patent Images

1. a manufacture method for semiconductor device, including:

  • The semiconductor substrate with a metal gasket district is provided;

    Forming a capping layer on this semiconductor base, wherein this capping layer has an opening and exposes the part in this metal gasket district;

    This part in this metal gasket district exposed in this opening of this capping layer is formed a Underbump metallization floor;

    This Underbump metallization layer forms a bump layer, to insert this opening of this capping layer and to extend to a upper surface of this capping layer;

    This bump layer is removed from this upper surface of this capping layer;

    Remove this upper surface of this capping layer, until a top of this bump layer protrudes from this capping layer;

    AndCarry out a buffering technique, slightly to grind this semiconductor base, make the thickness of this capping layer reach final goal thickness.

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