Semiconductor device, manufacturing method thereof and electronic device

Semiconductor device, manufacturing method thereof and electronic device

  • CN 105,633,043 A
  • Filed: 11/03/2014
  • Published: 06/01/2016
  • Est. Priority Date: 11/03/2014
  • Status: Active Application
First Claim
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1. a manufacture method for semiconductor device, including:

  • Semiconductor substrate is provided, described Semiconductor substrate is formed with the first protective layer and the metal pedestal layer of the first opening portion being arranged in described first protective layer;

    Described first protective layer and described metal pedestal layer form the second protective layer;

    Described second protective layer forms the second opening portion exposing described metal pedestal layer so that a part for described second protective layer covers the marginal portion of described metal pedestal layer;

    Forming under-bump metallization structure on described metal pedestal layer and described second protective layer, described under-bump metallization structure is electrically connected with described metal pedestal layer;

    AndDescribed under-bump metallization structure is formed solder projection.

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