Fin field effect transistor (FinFET) device with controllable end-to-end critical dimension and method of forming the same

Fin field effect transistor (FinFET) device with controllable end-to-end critical dimension and method of forming the same

  • CN 105,633,083 B
  • Filed: 07/23/2015
  • Issued: 06/05/2020
  • Est. Priority Date: 11/26/2014
  • Status: Active Grant
First Claim
Patent Images

1. A method for forming a fin field effect transistor (FinFET) device structure, comprising:

  • providing a substrate;

    forming a first fin structure and a second fin structure, the first fin structure and the second fin structure extending over the substrate;

    forming a dielectric layer on the first fin structure and the second fin structure;

    forming a polysilicon layer, a hard mask layer and a photoresist layer on the dielectric layer;

    patterning the photoresist layer to form a first trench in the photoresist layer, wherein the first trench has a first width;

    conformally forming a coating in the first trench to form a second trench in the photoresist layer, wherein the second trench has a second width, and the second width is less than the first width;

    patterning the hard mask layer by using the photoresist layer as a mask;

    patterning the polysilicon layer using the hard mask layer as a mask to form an end-to-end gap between the first fin structure and the second fin structure, wherein the end-to-end gap has a third width, and the third width is less than the first width.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×