Metal oxide thin film transistor and preparation method therefor, array substrate and display apparatus

Metal oxide thin film transistor and preparation method therefor, array substrate and display apparatus

  • CN 105,633,170 A
  • Filed: 02/23/2016
  • Published: 06/01/2016
  • Est. Priority Date: 02/23/2016
  • Status: Active Application
First Claim
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1. a metal oxide thin-film transistor, it is characterised in that:

  • being provided with active layer protective layer active layer and source-drain electrode separated, described active layer protective layer is (MO) x (SnO2) y thin film, wherein 0�



    x <

    1,0.4�



    y�



    1, and the combination that x+y=1, M are one or more arbitrary elements in silicon, aluminum, gallium, magnesium, calcium, strontium, bismuth, tantalum, hafnium, zirconium, scandium, yttrium or lanthanide series rare-earth elements.

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