Formation method of interconnect structures

Formation method of interconnect structures

  • CN 105,679,651 A
  • Filed: 02/10/2011
  • Published: 06/15/2016
  • Est. Priority Date: 03/15/2010
  • Status: Active Application
First Claim
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1. a forming method for internal connection-wire structure, comprising:

  • One dielectric layer is provided;

    Form a metallic pattern in this dielectric layer;

    AndForming an etching stopping layer, this etching stopping layer is directly on this metallic pattern and this dielectric layer, and wherein this etching stopping layer is the individual layer comprising oxygen doping carbide, and wherein this etching stopping layer uses multiple precursor, and this precursor comprises;

    One precursor, is selected from the group being made up of 1-methyl-monosilane, 2-methyl-monosilane, 3-methyl-monosilane, 4-methyl-monosilane and aforesaid combination;

    AndOne carbon-source gas containing carbon, wherein, this carbon-source gas comprises C2H4, wherein not containing carbonic acid gas in this carbon-source gas.

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