Transistor and display device

Transistor and display device

  • CN 105,679,766 A
  • Filed: 08/26/2010
  • Published: 06/15/2016
  • Est. Priority Date: 09/16/2009
  • Status: Active Application
First Claim
Patent Images

1. a transistor, including:

  • Gate electrode layer;

    Gate insulator adjacent to described gate electrode layer;

    Across the described gate insulator oxide semiconductor layer adjacent to described gate electrode layer, this oxide semiconductor layer includes channel region;

    AndIt is contacted with the oxide insulating layer of described oxide semiconductor layer,Wherein, described oxide semiconductor layer includes the metal outside indium, zinc and indium and zinc,The top of described oxide semiconductor layer includes crystal region, and this crystal region includes the crystallite carrying out c-axis orientation on the direction of upper surface being perpendicular to described oxide semiconductor layer,Further, described crystal region is not formed in side surface portion.

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