Substrate for solidifying a silicon ingot

Substrate for solidifying a silicon ingot

  • CN 105,705,476 A
  • Filed: 09/12/2014
  • Published: 06/22/2016
  • Est. Priority Date: 09/16/2013
  • Status: Active Application
First Claim
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1. a substrate, substrate in particular for contacting with liquid-state silicon, it is characterised in that described substrate surface-coated at least in part has laminated coating, and described laminated coating is at least by formed below:

  • -one layer being referred to as articulamentum, described articulamentum and described substrate contact, there is the open-cell porosity of at least 30% and formed by the material based on silicon dioxide with based on silicon nitride, the dioxide-containing silica of described material relative to the gross weight of described material by weight between 10% and 55%, and-one layer of being referred to as release layer different from described articulamentum, the described layer being referred to as release layer is positioned at the surface of described articulamentum and is formed by the material based on silicon dioxide with based on silicon nitride, the dioxide-containing silica of described material relative to the gross weight of described material by weight between 2% and 10%。

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