Low-Temperature Bonding Process

Low-Temperature Bonding Process

  • CN 105,742,258 A
  • Filed: 07/12/2011
  • Published: 07/06/2016
  • Est. Priority Date: 08/20/2010
  • Status: Active Application
First Claim
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1. one kind is used for assembling the first element and the method for the second element, described first element includes at least one the first substrate (2) or at least one chip (22,24,26,28), described second element includes at least one second substrate (12), and the method includes:

  • A) surface layer (4,4 '"'"' being referred to as bonded layer is formed on each substrate2, 4 '"'"'4, 4 '"'"'6, 4 '"'"'8,

         14), at least one of these bonded layers is to be formed at the temperature less than or equal to 300 DEG C;

    B) before assembly described bonded layer is referred to as the first annealing of degassed annealing, described first is annealed to and partially carries out under at least equal to follow-up bonded interface strengthening temperature Tr and the temperature higher than 350 DEG C but lower than 450 DEG C, without causing that the porous of described bonded layer significantly reduces;

    C) by making described bonded layer (4,4 '"'"'2, 4 '"'"'4, 4 '"'"'6, 4 '"'"'8,

         14) exposed surface contact assemble described substrate;

    D) structure assembled strengthens annealing under temperature Tr at the bonded interface higher than 350 DEG C and lower than 450 DEG C.

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