Semiconductor device structure and preparation method therefor

Semiconductor device structure and preparation method therefor

  • CN 105,742,350 A
  • Filed: 12/08/2014
  • Published: 07/06/2016
  • Est. Priority Date: 12/08/2014
  • Status: Active Application
First Claim
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1. a semiconductor device structure, it is characterised in that including:

  • Semiconductor substrate;

    Dielectric layer, is arranged on described Semiconductor substrate;

    Metal structure, embeds and is arranged in described dielectric layer, and the upper surface flush of the upper surface of described metal structure and described dielectric layer;

    Protective layer, covers the upper surface of described dielectric layer;

    Protective film, is arranged between described metal structure and described protection, to isolate described metal structure and described protective layer;

    Wherein, the material of described protective film is the compound of manganese.

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