Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

  • CN 105,826,174 A
  • Filed: 01/05/2015
  • Published: 08/03/2016
  • Est. Priority Date: 01/05/2015
  • Status: Active Application
First Claim
Patent Images

1. a semiconductor device, including:

  • Gate metal layer, is arranged on a substrate;

    First interlayer dielectric layer, surrounds the periphery of this gate metal layer;

    Bottom mask layer, is arranged in this gate metal layer, and wherein this mask layer includes at least one identical metallic atom composition with the composition of this gate metal layer;

    Top mask layer, is arranged on to orthodromic bottom this on surface of mask layer;

    AndSecond interlayer dielectric layer, is arranged on this top mask layer and directly contacts this first interlayer dielectric layer.

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