Graphene growing method, graphene layer, and semiconductor device

Graphene growing method, graphene layer, and semiconductor device

  • CN 105,845,543 A
  • Filed: 01/13/2015
  • Published: 08/10/2016
  • Est. Priority Date: 01/13/2015
  • Status: Active Application
First Claim
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1. the growing method of a Graphene, it is characterised in that include step:

  • Substrate is provided;

    Substrate is formed the metal silicide layer of monocrystalline;

    The method using chemical gaseous phase deposition, grows graphene layer on metal silicide layer.

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