Metal doping of amorphous carbon and silicon films for use as hard masks in substrate processing systems

Metal doping of amorphous carbon and silicon films for use as hard masks in substrate processing systems

  • CN 105,845,551 B
  • Filed: 02/03/2016
  • Issued: 01/01/2021
  • Est. Priority Date: 02/03/2015
  • Status: Active Grant
First Claim
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1. A method for depositing a metal doped amorphous carbon hardmask film comprising:

  • disposing a substrate on a susceptor in a process chamber;

    supplying a carrier gas to the process chamber;

    supplying a hydrocarbon precursor gas to the process chamber;

    supplying a metal-based precursor gas to the process chamber;

    providing a first RF power to the pedestal at a first frequency;

    providing a second RF power to the pedestal at a second frequency lower than the first frequency;

    one of generating a plasma in the process chamber or supplying a plasma to the process chamber; and

    depositing a metal doped amorphous carbon hard mask film on the substrate, wherein the carbon hard mask film comprises a metal carbide, increasing etch selectivity.

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