SiC-Based Superjunction Semiconductor Device

SiC-Based Superjunction Semiconductor Device

  • CN 105,870,162 A
  • Filed: 02/04/2016
  • Published: 08/17/2016
  • Est. Priority Date: 02/06/2015
  • Status: Active Application
First Claim
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1. a semiconductor device (1), including:

  • -semiconductor body (11), described semiconductor body (11) includes the semiconductor host material demonstrating the adulterant diffusion coefficient of the corresponding adulterant diffusion coefficient less than silicon;

    -at least one first semiconductor region (111-1,111-2), at least one first semiconductor region (111-1,111-2) described adulterant of the first conductivity-type adulterates, and demonstrate and extend to the cylindrical shape in semiconductor body (11) along bearing of trend (B), wherein, the difference width (D) of at least one the first semiconductor region (111-1,111-2) described increases continuously along described bearing of trend (B);

    -at least one second semiconductor region (112) of being included in semiconductor body (11), at least one second semiconductor region (112) described is adjacent at least one first semiconductor region (111-1,111-2) described and arranges, and adulterates with the adulterant of the second conductivity-type complementary with the first conductivity-type.

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