Ion implanted improved substrate with reduction of gallium-nitride-based electronic device epitaxial stress
Ion implanted improved substrate with reduction of gallium-nitride-based electronic device epitaxial stress
- CN 105,895,672 A
- Filed: 01/26/2015
- Published: 08/24/2016
- Est. Priority Date: 01/26/2015
- Status: Active Application
- EN CH
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- Pin
