Ion implanted improved substrate with reduction of gallium-nitride-based electronic device epitaxial stress

Ion implanted improved substrate with reduction of gallium-nitride-based electronic device epitaxial stress

  • CN 105,895,672 A
  • Filed: 01/26/2015
  • Published: 08/24/2016
  • Est. Priority Date: 01/26/2015
  • Status: Active Application
First Claim
Patent Images

1. reduce the improved-type substrate of ion implanting of gallium nitride based electronic device epitaxial stress,It is characterized in that, utilize ion implantation technique causing the modified ion implanting of backing material to heterogeneousBacking material, changes original physical function parameter of this foreign substrate material so that it is with nitridationThe physical function parameter of gallium and doped series material thereof matches, and reduces due to foreign substrate materialPhysical function parameter do not mate, with the physical function parameter of gallium nitride material, the gallium nitride causedThe foreign substrate epitaxial growth stress of base electron device, thus improve gallium nitride based electronicDevice epitaxial growth quality and device performance.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×