Semiconductor element and methods for manufacturing the same

Semiconductor element and methods for manufacturing the same

  • CN 105,905,865 A
  • Filed: 02/25/2016
  • Published: 08/31/2016
  • Est. Priority Date: 02/25/2015
  • Status: Active Application
First Claim
Patent Images

1. method (100;

  • 300), including;

    The substrate providing (110) treated arranges (10;

    70), treated substrate arranges (10;

    70) treated Semiconductor substrate (12) and the metallization structure (14) on the first type surface (16) of treated Semiconductor substrate (12) are included;

    AndFrom the surface of metallization structure (14) to treated Semiconductor substrate (12) release etch (120), being in for the Disengagement zone (25) in treated Semiconductor substrate (12) in metallization structure (14) and generate kerf (22), Disengagement zone (25) define treated substrate and arrange (10;

    70) die region (27;

    34a-b) arrange (10 with treated substrate;

    70) the border between at least the second district.

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