High efficiency electrostatic chuck assembly for semiconductor wafer processing

High efficiency electrostatic chuck assembly for semiconductor wafer processing

  • CN 105,914,175 A
  • Filed: 10/28/2011
  • Published: 08/31/2016
  • Est. Priority Date: 12/16/2010
  • Status: Active Application
First Claim
Patent Images

1. an electrostatic chuck assembly, including:

  • Flexible stack, this flexibility stack includes;

    First dielectric layer, this first dielectric layer includes PAEK, has substrate;

    Second dielectric layer, this second dielectric layer has plasma-treated composition surface, shouldFirst dielectric layer is bonded to this second dielectric layer;

    Electrode, this electrode is arranged between this first dielectric layer and this second dielectric layer;

    Optically transparent bonding agent, this first dielectric layer is bonded to by this optically transparent bonding agentThis second dielectric layer;

    AndSecond bonding agent, this second bonding agent is arranged at this of this second dielectric layer through plasmaTo engage with base on the composition surface processed, the second dielectric layer is being bonded to by this second bonding agentHave during base between every linear inch 2 pounds (0.91 kilogram) and every linear inch 14 pounds (6.35 public affairsJin) between peel strength.

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