Semiconductor wire bonding structure and method

Semiconductor wire bonding structure and method

  • CN 105,957,852 A
  • Filed: 07/13/2012
  • Published: 09/21/2016
  • Est. Priority Date: 07/13/2012
  • Status: Active Application
First Claim
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1. a quasiconductor routing joint method, comprises the following steps:

  • A () forms a chondritic in an end of a bonding wire;

    (b) this bonding wire mobile a so that weld pad of this chondritic contact semiconductor element;

    C () applies one first downforce and one first vibrational energy in this bonding wire so that this bonding wire is along a first partyTo vibration, and push this weld pad of part, to form one first teat on weld pad, and this chondritic is deformedBecome a junction;

    D () stops this first vibrational energy;

    AndE () changes this first downforce and becomes one second downforce, and apply one second vibrational energy in this bonding wire simultaneously,This bonding wire is vibrated along a second direction, and pushes this weld pad of part, to form one second teat on weld pad,The width of this first teat is roughly equal with the width of this second teat, and this first teat is continuous with this second teatGround forms a ring-type teat, and this ring-type teat surrounds the periphery of this connecting portion, and wherein this second direction is the most verticalThis first direction straight, and this first downforce is more than this second downforce,Wherein, this step (c) further includes applying 1 the 3rd vibrational energy in the step of this bonding wire, the 3rd vibrationEnergy makes this bonding wire vibrate along this second direction, and pushes this weld pad of part.

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