Zener diode with adjustable breakdown voltage

Zener diode with adjustable breakdown voltage

  • CN 105,990,452 B
  • Filed: 11/23/2015
  • Issued: 06/23/2020
  • Est. Priority Date: 03/19/2015
  • Status: Active Grant
First Claim
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1. A zener diode, comprising:

  • a zener diode junction formed in a semiconductor substrate between a cathode region and an anode region, and parallel to a surface of the substrate, the anode region having a first conductivity type, the cathode region being formed by a region having a second conductivity type on the surface of the substrate; and

    a first conductive region configured to generate a first electric field perpendicular to the Zener diode junction when subjected to an appropriate voltage,wherein the Zener diode comprises a second conductive region configured to generate a second electric field along a plane of the Zener diode junction when subjected to an appropriate voltage,wherein the second conductive region comprises a buried gate separated from the zener diode junction only by a dielectric layer.

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