EUV focus monitoring systems and methods

EUV focus monitoring systems and methods

  • CN 106,019,850 A
  • Filed: 03/17/2016
  • Published: 10/12/2016
  • Est. Priority Date: 03/31/2015
  • Status: Active Application
First Claim
Patent Images

1. a method, including:

  • Photomask inserts illuminator, and described photomask includes having first group of minor structure and second groupThe test structure of minor structure, described first group of minor structure has the first spacing, and described second group of sonStructure has the second spacing;

    With the first focus and utilize asymmetric lighting to irradiate described photomask, and thus utilize instituteState test structure and carry out the layer above patterned wafer;

    For the minor structure of first group of patterning of described wafer, measure the first shift value;

    For the minor structure of second group of patterning of described wafer, measure the second shift value;

    AndDescribed illumination system is compensated based on the difference between described first shift value and described second shift valueThe focus shift of system.

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