Cobalt deposition on barrier surfaces

Cobalt deposition on barrier surfaces

  • CN 106,024,598 B
  • Filed: 08/19/2009
  • Issued: 11/20/2020
  • Est. Priority Date: 08/29/2008
  • Status: Active Grant
First Claim
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1. A method for depositing a material on a substrate surface, comprising the steps of:

  • forming a barrier layer on a substrate, wherein the barrier layer comprises at least one material selected from the group consisting of tantalum, tantalum nitride, titanium nitride, tungsten, and combinations thereof, and wherein the barrier layer is of a material selected from the group consisting of tantalum, tantalum nitride, titanium nitride, tungsten, and combinations thereofToA thickness within the range;

    exposing the substrate to dicobalt hexacarbonylbutylacetylene (CCTBA) and hydrogen so as to form a cobalt layer on the barrier layer during a vapor deposition process, wherein the substrate is heated to a temperature in the range of 100 ℃

    to 250 ℃

    during the vapor deposition process;

    exposing the cobalt layer to a post-treatment gas during a thermal post-treatment process, wherein the substrate is heated to a temperature in a range from 50 ℃

    to 400 ℃

    during the thermal post-treatment process, and wherein the substrate is heated for a period of time in a range from 2 minutes to 20 minutes; and

    depositing a copper material over the cobalt layer, wherein the cobalt layer is cobalt boride, cobalt phosphide, or a combination of the cobalt boride and the cobalt phosphide.

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