Manufacturing method of LTPS TFT based on metal induced crystallization process

Manufacturing method of LTPS TFT based on metal induced crystallization process

  • CN 106,024,639 A
  • Filed: 07/21/2016
  • Published: 10/12/2016
  • Est. Priority Date: 07/21/2016
  • Status: Active Application
First Claim
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1. the manufacture method of a LTPS TFT based on crystallization inducing metal technique, it is characterised in thatComprise the following steps:

  • Step 1, offer underlay substrate (10), at the upper buffer layer (20) of underlay substrate (10),Cushion (20) deposits metal induction layer (35);

    Step 2, at the upper deposition of amorphous silicon films (36) of metal induction layer (35), utilize metal induction layer(35) amorphous silicon membrane (36) is carried out crystallization inducing metal, during crystallization inducing metal,The bottom-up crystallization of metal induction layer (35) induction amorphous silicon membrane (36) forms polysilicon membrane(30), metal induction layer (35) migrates upwardly to the top of polysilicon membrane (30) shape in connectionBecome metal silicide layer (31);

    Step 3, provide a halftoning mask plate (90), use this intermediate tone mask plate (90) to describedPolysilicon membrane (30) carries out patterned process, obtains active layer (33), described active layer (33)Including being positioned at source contact portion (331) and the drain contact (332) at two ends and being positioned at described source electrodeGroove (333) between contact site (331) and drain contact (332), wherein, described source electrodeContact site (331) is retained with the metal silicide layer (31) on drain contact (332), describedMetal silicide layer (31) on groove (333) is etched;

    Step 4, on described active layer (35) and cushion (20), deposit gate insulator(40), on described gate insulator (40), the first metal layer is deposited and patterned, obtains corresponding to instituteState the grid (45) of groove (333) top;

    Step 5, on described grid (45) and gate insulator (40), deposit interlayer insulating film(50), on described interlayer insulating film (50), second metal level is deposited and patterned, obtains source electrode(61) with drain electrode (62).

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