Production method for oxide semiconductor thin film transistor

Production method for oxide semiconductor thin film transistor

  • CN 106,057,679 A
  • Filed: 06/17/2016
  • Published: 10/26/2016
  • Est. Priority Date: 06/17/2016
  • Status: Active Application
First Claim
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1. the manufacture method of an oxide semiconductor thin-film transistor, it is characterised in that comprise the steps:

  • Step 1, provide a substrate (1), described substrate (1) forms the first metal layer (2 '"'"');

    Step 2, pattern described the first metal layer (2 '"'"'), form grid (2);

    Step 3, on described grid (2) and substrate (1), form gate insulator (3);

    Step 4, on described gate insulator (3), form oxide semiconductor layer (4 '"'"');

    Step 5, pattern described oxide semiconductor layer (4 '"'"'), formed on the gate insulator (3) being positioned on described grid (2)Active layer (4);

    Step 6, described active layer (4) being carried out plasma doping process, the part that will be far from gate insulator (3) side hasActive layer (4) becomes doped layer (5);

    Step 7, form the second metal level (6 '"'"') described doped layer (5) and gate insulator (3) are upper;

    Step 8, pattern described second metal level (6 '"'"'), formed respectively with the source electrode of two end in contact of described doped layer (5)(61) and drain electrode (62);

    Step 9, the doped layer (5) being pointed between source electrode (61) and drain electrode (62) carry out plasma deoxidization process, are gone backOriginally it was oxide semiconductor so that it is recover characteristic of semiconductor.

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