A kind of preparation method of chock insulator matter

A kind of preparation method of chock insulator matter

  • CN 106,094,427 A
  • Filed: 08/17/2016
  • Published: 11/09/2016
  • Est. Priority Date: 08/17/2016
  • Status: Active Grant
First Claim
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1. the preparation method of a chock insulator matter, it is characterised in that described preparation method includes:

  • Substrate is formed photoresist layer;

    Mask plate is used to be exposed described photoresist layer processing;

    Described photoresist layer through exposure-processed is carried out excessive development treatment, to form the first photoresist on the substratePattern and the second photoetching agent pattern, and be perpendicular to described substrate direction as short transverse so that in mutually level positionLocate the area of cross section of described first photoetching agent pattern more than the area of cross section of described second photoetching agent pattern, andDescribed first photoetching agent pattern outward flange near the bottom surface of described substrate is formed with recess, leans at described second photoetching agent patternThe outward flange of the bottom surface of nearly described substrate is formed with recess;

    Wait that Preset Time makes the photoresist on described first photoetching agent pattern surface flow downward to fill described first photoresistThe outer peripheral recess of patterned underside forms the first chock insulator matter, and makes the photoresist on described second photoetching agent pattern surface to dirtyMove and form the second chock insulator matter, the height of described first chock insulator matter with the described second outer peripheral recess in photoetching agent pattern bottom surface of fillingHeight more than described second chock insulator matter;

    First chock insulator matter described in after bake and described second chock insulator matter with formed described first chock insulator matter of solid-state and described second everyUnderbed.

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