With SiC as the high power semi-conductor packaging structure of substrate and method thereof

With SiC as the high power semi-conductor packaging structure of substrate and method thereof

  • CN 106,098,564 A
  • Filed: 06/17/2016
  • Published: 11/09/2016
  • Est. Priority Date: 06/17/2016
  • Status: Active Application
First Claim
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1. one kind with SiC as the high power semi-conductor packaging structure of substrate, it is characterised in that:

  • include substrate and use SiC conductThe chip of substrate, is provided with metal foam layers between described chip and substrate.

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