With SiC as the high power semi-conductor packaging structure of substrate and method thereof
With SiC as the high power semi-conductor packaging structure of substrate and method thereof
- CN 106,098,564 A
- Filed: 06/17/2016
- Published: 11/09/2016
- Est. Priority Date: 06/17/2016
- Status: Active Application
- EN CH
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- Pin
