Light emitting diode epitaxial wafer and preparation method thereof

Light emitting diode epitaxial wafer and preparation method thereof

  • CN 106,098,882 B
  • Filed: 07/25/2016
  • Issued: 08/18/2020
  • Est. Priority Date: 07/25/2016
  • Status: Active Grant
First Claim
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1. The light-emitting diode epitaxial wafer is characterized by comprising a substrate, and a buffer layer, an undoped GaN layer, a superlattice stress release layer, a P-type layer, an electronic barrier layer, a multi-quantum well layer, a current expansion layer and an N-type layer which are sequentially stacked on the substrate;

  • the superlattice stress release layer comprises MgN layers and GaN layers which are alternately stacked, or the superlattice stress release layer comprises P-type doped Al which is alternately stackedxGa1-xN layer and P type doped GaN layer, x is more than 0 and less than 1.

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