Method for manufacturing a semiconductor wafer suitable for manufacturing an SOI substrate and SOI substrate wafer obtained thereby

Method for manufacturing a semiconductor wafer suitable for manufacturing an SOI substrate and SOI substrate wafer obtained thereby

  • CN 106,170,846 B
  • Filed: 03/27/2015
  • Issued: 08/10/2021
  • Est. Priority Date: 03/31/2014
  • Status: Active Grant
First Claim
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1. A method for manufacturing a silicon-on-insulator substrate, comprising manufacturing a carrier substrate and manufacturing a semiconductor film (40), the semiconductor film (40) being located on top of a buried insulating layer (36), the buried insulating layer (36) itself being located on top of the carrier substrate (1, 4, 12, 14), wherein the manufacturing of the carrier substrate comprises manufacturing a stack located between a semiconductor carrier (1) and the buried insulating layer and comprising at least one initial structure (4, 12, 14) on one side (2) of the semiconductor carrier, the manufacturing of the initial structure comprising in sequence the steps of:

  • -producing a first layer (4) of polycrystalline semiconductor on the side (2) of the semiconductor carrier (1);

    -forming an interface region (12) on the top side (7) of the first layer (4), the interface region (12) being made of an amorphous or unstructured material; and

    -producing a second layer (14) of polycrystalline semiconductor on the interface region (12).

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