A kind of preparation method of semiconductor rectifier bridge

A kind of preparation method of semiconductor rectifier bridge

  • CN 106,270,880 A
  • Filed: 08/15/2016
  • Published: 01/04/2017
  • Est. Priority Date: 08/15/2016
  • Status: Active Application
First Claim
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1. the preparation method of a semiconductor rectifier bridge, it is characterised in that comprise the steps:

  • Prepare crystal grain, P face weld tabs and N face weld tabs in advance;

    Described P face weld tabs is loaded into pre-welding plate;

    Described crystal grain has P face and N face, by described crystal grain by point carrying out point facing to the P of the described crystal grain of guarantee to screen trayOn, and crystal grain back-off point backward is placed on the weld tabs of described P face makes the P face of described crystal grain be close to described P face weld tabs;

    Described N face weld tabs is close to the N face of described crystal grain and sandwiches described crystal grain with described P face weld tabs;

    Described pre-welding plate is carried out prewelding process by high temperature welding furnace thus obtains the crystal grain of pre-postwelding;

    Described upper frame and described underframe are placed side by side on framework dish;

    Weldering solvent will be helped to be applied on described upper frame and described underframe;

    The crystal grain of described pre-postwelding is changed and is filled on described underframe;

    The upset of described upper frame is covered on described underframe, thus obtains conjunction sheet;

    Described conjunction sheet is placed in graphite jig and builds graphite;

    The graphite jig being placed with described conjunction sheet is carried out soldering by soldering furnace, then obtains quasiconductor through encapsulation and decompositionRectifier bridge.

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