A kind of manufacture method of SiC device terminal structure

A kind of manufacture method of SiC device terminal structure

  • CN 106,298,468 A
  • Filed: 05/13/2015
  • Published: 01/04/2017
  • Est. Priority Date: 05/13/2015
  • Status: Active Application
First Claim
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1. a manufacture method for SiC device terminal structure, the method is as follows:

  • Step one, mask is injected in the silicon carbide substrates upper surface deposit at the second conduction type of SiC device terminal;

    Step 2, carries out photoetching to injecting mask, exposes the region needing to carry out ion implanting;

    Step 3, etching is injected mask, is formed and inject window, then etching silicon carbide substrate, forms etched recesses;

    Step 4, removes photoresist;

    Step 5, injects the ion of the first conduction type, forms the ion of the first conduction type in SiC device terminal structureInjection region.

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