A kind of polycrystalline silicon etching method

A kind of polycrystalline silicon etching method

  • CN 106,298,494 A
  • Filed: 06/24/2015
  • Published: 01/04/2017
  • Est. Priority Date: 06/24/2015
  • Status: Active Grant
First Claim
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1. a polycrystalline silicon etching method, it is characterised in that comprise the following steps:

  • S1;

    form SiN layer on polysilicon layer surface, and etch described SiN layer and make it graphical, obtain the hard mask of SiNLayer;

    S2;

    be not etched around described SiN hard mask layer shape between SiN residual particles and described polysilicon layer thoroughlyBecome oxide layer;

    S3;

    use wet etching to remove described oxide layer, make described SiN residual particles depart from described polysilicon because of unsettledLayer;

    S4;

    as mask, described polysilicon layer is performed etching using described SiN hard mask layer.

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