Semiconductor device and manufacture method thereof and include the electronic equipment of this device

Semiconductor device and manufacture method thereof and include the electronic equipment of this device

  • CN 106,298,875 A
  • Filed: 09/30/2016
  • Published: 01/04/2017
  • Est. Priority Date: 09/30/2016
  • Status: Active Application
First Claim
Patent Images

1. a semiconductor device, including:

  • Substrate;

    It is sequentially stacked on substrate and the first source drain adjacent to each other, channel layer and the second source drain, wherein, the first source/Between drop ply and channel layer and channel layer and the second source drain have and suddenlyd change the interface defined by doping content;

    AndThe grid stacking formed around the periphery of channel layer.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×