Semiconductor device and preparation method thereof, and electronic apparatus

Semiconductor device and preparation method thereof, and electronic apparatus

  • CN 106,365,108 A
  • Filed: 07/23/2015
  • Published: 02/01/2017
  • Est. Priority Date: 07/23/2015
  • Status: Active Application
First Claim
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1. a kind of preparation method of semiconductor device, comprising:

  • Step s1;

    provide bottom wafers, described bottom wafers are formed with some mems devices andCmos device, wherein, described mems device and described cmos device is respectively formed withFirst bond pad;

    Step s2;

    provide and cover wafer, described covering wafer is formed with and described first bond pad phaseCorresponding second bond pad;

    Step s3;

    described first bond pad and described second bond pad are engaged, so that described bottomPortion'"'"'s wafer and described covering wafer are combined into one;

    Step s4;

    form electrical connection above the second bond pad described in described covering wafer.

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