Detection sensor and production method thereof

Detection sensor and production method thereof

  • CN 106,365,110 A
  • Filed: 07/24/2015
  • Published: 02/01/2017
  • Est. Priority Date: 07/24/2015
  • Status: Active Application
First Claim
Patent Images

1. a kind of preparation method of detection sensor is it is characterised in that include:

  • Semiconductor substrate is provided;

    One sacrifice layer is formed on described semiconductor base, in described sacrifice layer, is formed with through hole;

    Form a first medium layer in the side wall of described through hole;

    Form a conductive layer in described first medium layer, described conductive layer is located at the interior of described first medium layerWall simultaneously covers the bottom of described through hole;

    Form a second dielectric layer in described conductive layer, to form connector, described connector in described through holeIncluding sequentially forming described first medium layer, conductive layer and second dielectric layer from the inside to the outside, described second is situated betweenMatter layer exposes the top of described conductive layer;

    Remove described sacrifice layer.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×