Memory device

Memory device

  • CN 106,486,149 A
  • Filed: 06/28/2016
  • Published: 03/08/2017
  • Est. Priority Date: 08/30/2015
  • Status: Active Application
First Claim
Patent Images

1. a kind of memory device is it is characterised in that comprise:

  • The a plurality of character line extending along a first direction;

    AndAt least one internal storage location, comprises:

    Multiple memory subassemblies, the plurality of memory subassembly is along the second direction setting being different from this first direction;

    At least one bit line, extends along this second direction, and in order to transmit the data of a selected memory subassembly;

    At least one line character line, extends along this second direction;

    AndMultiple switch, this switch each has the control end being coupled to this at least one line character line, is coupled at least oneDeposit a first end of assembly, and one second end being coupled to this at least one bit line.

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