MOS transistor and forming method thereof

MOS transistor and forming method thereof

  • CN 106,486,373 B
  • Filed: 08/28/2015
  • Issued: 06/09/2020
  • Est. Priority Date: 08/28/2015
  • Status: Active Grant
First Claim
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1. A method for forming a MOS transistor, comprising:

  • providing a semiconductor substrate, wherein the semiconductor substrate is provided with a central area and an edge area, the surface of the semiconductor substrate is provided with a first interlayer dielectric layer and a metal gate structure positioned in the first interlayer dielectric layer of the central area, the surface of the first interlayer dielectric layer of the edge area is lower than that of the first interlayer dielectric layer of the central area, and a metal layer is formed on the first interlayer dielectric layer of the edge area;

    forming a bonding layer on the surface of the metal layer or the surfaces of the metal layer, the metal gate structure and the first interlayer dielectric layer by adopting an atomic layer deposition process;

    and after the bonding layer is formed, forming a second interlayer dielectric layer in the central area and the edge area, wherein the bonding layer is used for bonding the metal layer and the second interlayer dielectric layer.

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